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Analog Devices
 

ASRock Industrial
 

NVIDIA
 

ECOM s.r.o.
 

Yamaichi Electronics USA Inc.
 

Laird Thermal Systems
 

HARTING
 

A.P.O. - ELMOS v.o.s.
 

REM-Technik s.r.o.
 

MACH SYSTEMS s.r.o.
 

Pico Technology
 

Lynred
 

Advantech
 

EBV

29.06.2022 18:02:12
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DPI 750E
 
RS Components přidává řadu vylepšených i
SMI200
 
Nový pohled na klasiku: Kompaktní HMI s
BHI260AB
 
An All-in-One Programmable Smart Sensor
BAHCO
 
Sada izolovaných klíčů BAHCO
s-Sense
 
Moduly s-Sense firmy R&D SOFTWARE SOLUTI
LP-RF
 
Panasonic: LP-RF – cenově dostupné laser
TH381
 
Miniaturní těsné svorky řady TH381
TP-1303
 
Dvoukanálové napájecí zdroje Twintex řad
AR236.B a AR232.B
 
Bezdrátové záznamníky AR236.B a AR232.B
JZ-500 a JZ-500-C
 
Kabely JZ-500 a JZ-500-C černé barvy fir

Nexperia announces next generation 650 V Gallium Nitride (GaN) Technology
Next-gen GaN technology targets automotive, 5G and datacenter applications; Devices available packaged in TO-247 and innovative Copper Clip SMD

Nexperia, the expert in essential semiconductors, has announced a new range of GaN FET devices featuring next-gen high-voltage GaN HEMT H2 technology in both TO-247 and the company’s proprietary CCPAK surface mount packaging. Devices achieve superior switching FOMs and on-state performance with improved stability, and simplify application designs thanks to their cascode configuration which eliminates the need for complicated drivers and controls.

The new GaN technology employs through-epi vias, reducing defects and shrinking die size by around 24%. RDS(on) is also reduced to just 41 mΩ (max., 35 mΩ typ. at 25 °C) with the initial release in traditional TO-247, with high threshold voltage and low diode forward voltage. The reduction will further increase, to 39 mΩ (max., 33 mΩ typ. at 25 °C) with CCPAK surface-mount versions. Because the parts are configured as cascode devices, they are also simple to drive using standard Si MOSFET drivers. Both versions meet the demands of AEC-Q101 for automotive applications.

Dilder Chowdhury, Nexperia’s GaN Strategic Marketing Director commented: “Customers need a highly-efficient, cost-effective solution for high power conversion at 650 V and around the 30-40 mΩ RDS(on), where applications include on-board chargers, DC/DC converters and traction inverters in electric vehicles, and industrial power supplies in the 1.5-5 kW range for titanium-grade rack mounted telecoms, 5G and datacenters. Nexperia continues to invest in the development and expansion of its range of products using next generation GaN processes, initially releasing traditional TO-247 versions and bare die format for power module makers, followed by our high-performance surface mount CCPAK packages."

Nexperia’s CCPAK surface mount packaging adopts Nexperia’s proven innovative copper-clip package technology to replace internal bond wires. This reduces parasitic losses, optimizes electrical and thermal performance, and improves reliability. CCPAK GaN FETs are available in top- or bottom-cooled configurations making them very versatile and help further improving heat dissipation.

650 V GAN041-650WSB in TO-247 and GAN039-650NBB in CCPAK are sampling now. More information including product specs and datasheets is available at www.nexperia.com/gan-fets.

2020061101 / 11.06.2020 / Elektronické součástky / NEXPERIA /

Nexperia launches new portfolio of application specific MOSFETs (ASFETs) for automotive airbags
Provides excellent transient linear mode performance using new SOA trench technology in LFPAK packaging providing designers with a smaller and more reliable choice.

Nexperia establishes new Application Specific FET category to deliver optimized performance
‘ASFETs’ feature MOSFET parameters tailored for particular applications

Nexperia launches industry-first LED drivers in DFN package with side-wettable flanks
AEC-Q101-qualified DFN2020D-6 devices save up to 90% PCB space; side-wettable flanks enable automated inspection (AOI) and improve reliability

Nexperia launches Common Mode Filter with ESD protection for HDMI2.1 and DisplayPort
Nexperia, the expert in essential semiconductors, has announced its new PCMFxHDMI2BA-C, a combined, highly efficient, common mode filter and ESD protection device with the widest 10 GHz differential bandwidth. It is suitable for the latest HDMI 2.1 standard up to 12G FRL, where eye-diagram tests were passed even with “worst cable model”.

New automotive TrEOS ESD protection from Nexperia combines high signal integrity, low clamping voltage and high surge robustness
Industry-benchmark performance devices now AEC-Q101 qualified - protecting infotainment, multimedia and ADAS systems.

Nexperia launches ‘Power Live’ July 2nd & 3rd 2020
Nexperia, the expert in essential semiconductors, today announced ‘Power Live’ a virtual conference on the 2nd and 3rd of July which will cover a wide range of subjects related to power electronics including GaN devices, Silicon Germanium (SiGe) rectifiers, automotive applications and packaging technology.

Nexperia delivers widest range of AEC-Q101 discretes in miniature, leadless rugged DFN packages
Nexperia today announced the industry’s widest portfolio of automotive-qualified discretes in space-saving, thermally-efficient, AOI-compatible DFN (Discrete Flat No leads) packages. The AEC-Q101 range of devices available cuts across all Nexperia’s product groups and includes switching, Schottky, Zener and protection diodes, bipolar junction transistors (BJTs), N- and P-channel MOSFETs, resistor-equipped transistors and LED drivers.

Nexperia announces next generation 650 V Gallium Nitride (GaN) Technology
Next-gen GaN technology targets automotive, 5G and datacenter applications; Devices available packaged in TO-247 and innovative Copper Clip SMD

Silicon Germanium (SiGe) rectifiers from Nexperia combine cutting-edge high efficiency, thermal stability and space-savings
AEC-Q101 approved devices with 120 V, 150 V, and 200 V combine best attributes of Schottky and fast recovery diodes

Nexperia launches P-channel MOSFETs in robust, space-saving LFPAK56 package
Nexperia, the expert in essential semiconductors, has launched industry’s first family of P-channel MOSFETs in the robust, space-saving LFPAK56 (Power-SO8) package. AEC-Q101 qualified for automotive applications, the new devices are an ideal replacement for DPAK MOSFETs, offering a reduction in footprint of over 50% whilst maintaining high performance levels. The new products are available in 30 V – 60 V, with RDS(on) down to 10 mΩ (30 V)

Ultra-tiny MOSFETs from Nexperia are 36% smaller with lowest RDS(on)
Nexperia has launched a range of MOSFETs in the ultra-small DFN0606 package for mobile and portable applications including wearables. The devices also offer the lowest RDS(on) for their size and employ the commonly used pitch of 0.35 mm to simplify PCB assembly processes.

Nexperia delivers first ESD protection device for USB4
TrEOS diodes fully support USB4TM standard; devices feature low clamping, low capacitance, low leakage and very robust

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ENERGETAB 2021 Poland, Bielsko Biala, 14.9.-16.9.2021

Firma týdne

Friedrich Lütze GmbH


Adresář


Friedrich Lütze GmbH


Analog Devices


ASRock Industrial


NVIDIA


ECOM s.r.o.


Yamaichi Electronics USA Inc.


Laird Thermal Systems


HARTING


A.P.O. - ELMOS v.o.s.


REM-Technik s.r.o.


MACH SYSTEMS s.r.o.


Pico Technology


Lynred


Advantech


EBV


SECO S.p.A.


Crowd Supply


Digi-Key Electronics


Durakool


KEMET


INTEL


CODICO


akYtec GmbH


Future Electronics


Foremost Electronics


Littelfuse


Mouser Electronics


RUTRONIK


Infineon Technologies AG


TTI, Inc.



Kalendář
electronica 2022, 15.11.-18.11.2022, München, DE
DistribuTECH, 7.2.-9.2.2023, San Diego, CA
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DistribuTECH, 23.1.-25.1.2024, Indianapolis, IN
DistribuTECH, 11.2.-13.2.2025, Dallas, TX

Interesting video
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Interesting video
Mouser Electronics Warehouse Tour with Grant Imahara


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